Structural , D.C , and A.C. Mechanism for thermally evaporated Cd X Se 1-X thin films
This thesis was including study the effect of different concentration (X=0.1,0.2,0.3,and 0.4), thickness, t (200-500)nm ,and substrate temperature ,T (300-393)K on the structural and electrical properties for CdXSe1-Xs thin films ,which prepared by thermal evaporation on glass substrate under vacuum of (2 2 ×10 -5 mbar), and studying the mechanism of transition for the d.c conductivity and a.c conductivity.