Electrical properties of MOS devices
In this work the electrical properties of the locally produced MOS devices are investigated. For this purpose, simple MOS capacitor is used. The oxide in this structure was prepared by the thermal oxidation technique. MOS capacitors are used for its simple fabrication and analysis. The important parameters which affect the MOS device performance and stability are mobile impurities, oxide charge and interface states density which are described in details in the present work.
English