M.Sc.

The purpose o-f this work is to apply the variational principle with Rayl ei gh-Ri tz method -for a system o-f partial di-f-f erenti al equations in elastodynamic shell structure, which can be represented as generalized eigenvalue problem Ax = XBx. A variant o-f the QR & QZ-algorithms that can be used to solve it. In this work a computer program has been developed using QZ-al gor i thm to -find the eigenvalues of the above problem.

Semiconductor device modeling in two dimension using fully transient parameters analysis is described- n-Type field effect transistor (FET) model with one carrier and three Ohmic contacts is considered. The suggested model uses the Finite Difference method, with extended Chebyshev acceleration procedure to overcome divergency problem associated with FET device modeling. Results of application to Gallium Arsenide (GaAs) metal-semiconductor junction FET (MESFET) are given and compared with other known models.