An approach to the numerical solution of coupled nonlinear transient partial differential equations

Semiconductor device modeling in two dimension using fully transient parameters analysis is described- n-Type field effect transistor (FET) model with one carrier and three Ohmic contacts is considered. The suggested model uses the Finite Difference method, with extended Chebyshev acceleration procedure to overcome divergency problem associated with FET device modeling. Results of application to Gallium Arsenide (GaAs) metal-semiconductor junction FET (MESFET) are given and compared with other known models.