Two-dimensional device simulation of AlGaN/GaN high electron mobility transistor (HEMT).
Abstract: Microwave power transistors made of conventional semiconductors have already approached their performance limit. In order to meet the future needs of wireless communication systems, research efforts are directed to wide bandgap semiconductors such as GaN. The combined merits of high power and high speed can be achieved using High Electron Mobility Transistors (HEMTs) made of AlGaN/GaN materials system. In this work, presents both one-dimensional and two-dimensional models to assess the static characteristics of AlGaN/GaN HEMT.