PREPARATION AND CHARACTERIZATION OF PHOTOVOLTAIC PROPERTIES OF POROUS SILICON

number: 
3234
English
Degree: 
Author: 
Mayameen Salman kadhim
Supervisor: 
Dr. Saad A. M. Salih
year: 
2014
Abstract:

In the present work, fabrication of Porous silicon is generated successfully by photo-electrochemical etching process. The purpose is to differentiate the characterization of the PSi solar cell compared to the bulk silicon. This is done on the n-type region with (100) orientation using different variable parameters and fixed electrolyte solution HF:C2H5OH:H2O (2:3:3). Physical properties of PSi may be varied with the process parameters such as current density, anodization time and laser wavelengths and powers. The applied current densities were in the range (10,15,20&25) mA/cm2, at fixed times while the anodization times were applied diversely depending upon the laser powers used as in the range (10,15,20,25)min for the (50) mW and (3,6, 9 &12)min for the (100)mW at fixed current densities. The laser wavelengths applied were (405 nm violet, 473 nm blue,532 nm green & 671nm red). In order to determine the optical properties, electrical properties and the surface morphology of PSi, the samples were tested by photoluminescence (PL), analyzed by I-V measurement and characterized by Scanning electronic microscope, optical microscopy as well as Atomic force microscope. The values of pores ratios and diameters, layer thickness, energy band gap and cell efficiency were measured to improve and identify the optical properties of the PSi, thus, the solar cell performance. This work has approved the role of laser light assisting electro chemical etching process in general and blue laser in specific as it was the superior among the other available lasers applied for the process. Pore diameters produced in this study are in the mesopores range while the other optical property represented by the refractive index is in the acceptable values. Porosities produced have almost approached 90% at some samples used which is expected to be excellent values for solar cells. The band gap of the fabricated layer has raised up to (2.8 eV) which is more than twice its original value for the c-Si which is (1.12 eV). The present study has proved the utilities and benefits of the fabricated PSi monolayer to produce an excellent ARC for efficient solar cells and for different other applications.